naina semiconductor ltd. MUR20040CT thru mur20060ctr 1 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com super fast recovery diode, 200a features ? dual diode construction ? low leakage current ? low forward voltage drop ? high surge current capability ? super fast switching maximum ratings (t j = 25 o c unless otherwise specified) parameter symbol conditions MUR20040CT(r) mur20060ct(r) units repetitive peak reverse voltage v rrm 400 600 v rms reverse voltage v rms 280 420 v dc blocking voltage v dc 400 600 v average forward current i f(av) t c 140 o c 200 200 a non-repetitive forward surge current, half sine- wave i fsm t c = 25 o c 800 800 a electrical characteristics (t j = 25 o c unless otherwise specified) parameter symbol conditions MUR20040CT(r) mur20060ct(r) units dc forward voltage v f i f = 50 a t j = 25 o c 1.3 1.7 v dc reverse current i r v r = 50 v t j = 25 o c 25 25 a v r = 50 v t j = 125 o c 1 1 ma maximum reverse recovery time t rr i f = 0.5a i r = 1.0a i rr = 0.25a 90 110 ns thermal characteristics (t j = 25 o c unless otherwise specified) parameter symbol MUR20040CT(r) mur20060ct(r) units thermal resistance junction to case r thj-c 1.0 1.0 o c/w operating, storage temperature range t j , t stg - 40 to +175 - 40 to +175 o c twin tower package
naina semiconductor ltd. MUR20040CT thru mur20060ctr 2 d-95, sector 63, noida C 201301, india ? tel: 012 0-4205450 ? fax: 0120-4273653 sales@nainasemi.com ? www.nainasemi.com package outline all dimensions in mm ordering table mur 200 40 ct 1 2 3 4 1 C device type > mur = dual diode recovery module 2 C current rating = i f(av) 3 C voltage = code x 10 = v rrm 4 C polarity > ct = normal (cathode to base) > ctr = reverse (anode to base)
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